Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 -100% 更低的延时
更快的写入速度，GB/s

14.9 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 27
读取速度，GB/s

3,573.5 18.2
写入速度，GB/s

1,308.1 14.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston KHX21334D4/8G 8GB

Kingston KHX21334D4/8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB