Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology CT32G4DFD832A.C16FE 32GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 19.3

测试中的平均数值

Crucial Technology CT32G4DFD832A.C16FE 32GB

需要考虑的原因
Crucial Technology CT32G4DFD832A.C16FE 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 54

左右 -54% 更低的延时
更快的写入速度，GB/s

15.2 1,308.1

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT32G4DFD832A.C16FE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 35
读取速度，GB/s

3,573.5 19.3
写入速度，GB/s

1,308.1 15.2
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

371 3525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3600C17-16GTZKK 16GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

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Kingston ACR24D4U7D8MB-16 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB