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Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C14-16GTZSK 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3200C14-16GTZSK 16GB

总分
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

差异 规格 评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB 需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19
    测试中的平均数值
G Skill Intl F4-3200C14-16GTZSK 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZSK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 -108% 更低的延时
  • 更快的写入速度，GB/s
    17.1 left arrow 1,308.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C14-16GTZSK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 26
  • 读取速度，GB/s
    3,573.5 left arrow 19.0
  • 写入速度，GB/s
    1,308.1 left arrow 17.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    371 left arrow 4022

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较

Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB

G Skill Intl F4-3200C14-16GTZSK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM