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Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

总分
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

差异 规格 评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB 需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 54
    左右 -46% 更低的延时
  • 更快的写入速度，GB/s
    7.8 left arrow 1,308.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 37
  • 读取速度，GB/s
    3,573.5 left arrow 10.4
  • 写入速度，GB/s
    1,308.1 left arrow 7.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    371 left arrow 2213

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较

Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMK16GX4M2Z3200C16 8GB
Corsair CMK16GX4M2Z3200C16 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4B8G2J2133A15S 8GB
Corsair CM4B8G2J2133A15S 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905744-005.A00G 16GB
Kingston 9905744-005.A00G 16GB
内存RAM
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
内存RAM