Samsung M378B5773DH0-CH9 2GB vs Kingston 9905744-005.A00G 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Kingston 9905744-005.A00G 16GB

需要考虑的原因
Kingston 9905744-005.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的读取速度，GB/s

17.3 11.7

测试中的平均数值
更快的写入速度，GB/s

14.2 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston 9905744-005.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

11.7 17.3
写入速度，GB/s

7.2 14.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston 8ATF1G64AZ-2G3A141 8GB

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Corsair CM2X1024-6400C4 1GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston HX432C15PB3/16G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Ramsta Ramsta-2666MHz-4G 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Corsair CMK32GX4M2L3000C15 16GB