Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 16ATF2G64HZ-2G6H1 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G6H1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6H1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 54

左右 -64% 更低的延时
更快的写入速度，GB/s

8.8 1,308.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 33
读取速度，GB/s

3,573.5 14.7
写入速度，GB/s

1,308.1 8.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

371 2498

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Corsair CMK64GX4M8X4200C19 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB