RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M378A1G43TB1-CTD 8GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung M378A1G43TB1-CTD 8GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Samsung M378A1G43TB1-CTD 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
更快的读取速度,GB/s
3
16.6
测试中的平均数值
需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
54
左右 -93% 更低的延时
更快的写入速度,GB/s
13.7
1,308.1
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M378A1G43TB1-CTD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
28
读取速度,GB/s
3,573.5
16.6
写入速度,GB/s
1,308.1
13.7
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
371
3007
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Samsung M378A1G43TB1-CTD 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M378A1G43TB1-CTD 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CM4X16GE2133C13K8 16GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905702-120.A00G 8GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Team Group Inc. Team-Value-800 2GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK16GX4M2Z2933C16 8GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C18-8GTZRB 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingston HP32D4U8S8HC-8XR 8GB
Corsair CM4X8GD3000C16K4 8GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
PNY Electronics 4GBH2X02E99927-16 4GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
报告一个错误
×
Bug description
Source link