Nanya Technology NT1GT64U88D0BY-AD 1GB vs Corsair CMR32GX4M2D3000C16 16GB

总分

Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

总分

Corsair CMR32GX4M2D3000C16 16GB

Corsair CMR32GX4M2D3000C16 16GB

差异规格评论

差异

Nanya Technology NT1GT64U88D0BY-AD 1GB

需要考虑的原因
Nanya Technology NT1GT64U88D0BY-AD 1GB

报告一个错误

更快的读取速度，GB/s

4 19.1

测试中的平均数值
更快的写入速度，GB/s

2,636.8 15.2

测试中的平均数值

Corsair CMR32GX4M2D3000C16 16GB

需要考虑的原因
Corsair CMR32GX4M2D3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 68

左右 -172% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT1GT64U88D0BY-AD 1GB

Corsair CMR32GX4M2D3000C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 25
读取速度，GB/s

4,540.8 19.1
写入速度，GB/s

2,636.8 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

827 3768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Corsair CMK32GX4M4A2133C13 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B1G73BH0-CK0 8GB

Samsung M471B1G73BH0-CK0 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB