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Nanya Technology NT1GT64U88D0BY-AD 1GB
Corsair CMW32GX4M2C3466C16 16GB

Nanya Technology NT1GT64U88D0BY-AD 1GB vs Corsair CMW32GX4M2C3466C16 16GB

总分
star star star star star
Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

总分
star star star star star
Corsair CMW32GX4M2C3466C16 16GB

Corsair CMW32GX4M2C3466C16 16GB

差异 规格 评论

差异

Nanya Technology NT1GT64U88D0BY-AD 1GB 需要考虑的原因
Nanya Technology NT1GT64U88D0BY-AD 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,636.8 left arrow 16.1
    测试中的平均数值
Corsair CMW32GX4M2C3466C16 16GB 需要考虑的原因
Corsair CMW32GX4M2C3466C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 68
    左右 -162% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT1GT64U88D0BY-AD 1GB
Corsair CMW32GX4M2C3466C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 26
  • 读取速度，GB/s
    4,540.8 left arrow 20.2
  • 写入速度，GB/s
    2,636.8 left arrow 16.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    827 left arrow 3936

Nanya Technology NT1GT64U88D0BY-AD 1GB RAM的比较

SK Hynix HYMP125U72CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

Corsair CMW32GX4M2C3466C16 16GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9965589-031.D01G 2GB
Kingston 9965589-031.D01G 2GB
内存RAM
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
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内存RAM
Micron Technology 16JSF51264HZ-1G1D1 4GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Kingston 99U5471-012.A00 4GB
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内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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内存RAM
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Kingston 9905403-444.A00LF 4GB
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Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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内存RAM
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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Kingston KHX3200C20S4/16G 16GB
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