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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Avant Technology W642GU42J2320NH 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Avant Technology W642GU42J2320NH 16GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
Avant Technology W642GU42J2320NH 16GB

Avant Technology W642GU42J2320NH 16GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 18% 更低的延时
Avant Technology W642GU42J2320NH 16GB 需要考虑的原因
Avant Technology W642GU42J2320NH 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.1 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Avant Technology W642GU42J2320NH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 34
  • 读取速度，GB/s
    11.7 left arrow 18.1
  • 写入速度，GB/s
    8.4 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 3505

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

Avant Technology W642GU42J2320NH 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SF4641G8CK8I8HLSBG 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP24D4R7D4MAM-32 32GB
Kingston HP24D4R7D4MAM-32 32GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM