Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Crucial Technology CT4G3S1067M.C16FKR 4GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Crucial Technology CT4G3S1067M.C16FKR 4GB

Crucial Technology CT4G3S1067M.C16FKR 4GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时
更快的读取速度，GB/s

11.7 10.1

测试中的平均数值
更快的写入速度，GB/s

8.4 6.6

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25% 更高的带宽

Crucial Technology CT4G3S1067M.C16FKR 4GB

需要考虑的原因
Crucial Technology CT4G3S1067M.C16FKR 4GB

报告一个错误

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT4G3S1067M.C16FKR 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 30
读取速度，GB/s

11.7 10.1
写入速度，GB/s

8.4 6.6
内存带宽，mbps

10600 8500

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-8500, 1.5V, CAS Supported: 6 7 8
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

1578 1675

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Crucial Technology CT4G3S1067M.C16FKR 4GB

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A-DATA Technology VDQVE1B16 2GB

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Samsung M378A1G44AB0-CWE 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK64GX4M8X4000C19 8GB

Corsair CMK64GX4M8X4000C19 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

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A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Kingston 9965662-013.A01G 16GB

Kingston 9965662-013.A01G 16GB

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Samsung M378A1G43DB0-CPB 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB