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Samsung 1600 CL10 Series 8GB
Golden Empire CL16-16-16 D4-3200 4GB

Samsung 1600 CL10 Series 8GB vs Golden Empire CL16-16-16 D4-3200 4GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
Golden Empire CL16-16-16 D4-3200 4GB 需要考虑的原因
Golden Empire CL16-16-16 D4-3200 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.6 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Golden Empire CL16-16-16 D4-3200 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    16.1 left arrow 18.6
  • 写入速度，GB/s
    10.1 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3413

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Golden Empire CL16-16-16 D4-3200 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMW128GX4M8X3600C18 16GB
Corsair CMW128GX4M8X3600C18 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965589-030.D01G 8GB
Kingston 9965589-030.D01G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMR128GX4M8X3800C19 16GB
Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMD32GX4M4B3000C15 8GB
Corsair CMD32GX4M4B3000C15 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
内存RAM