Nanya Technology NT2GC64B8HC0NS-CG 2GB vs G Skill Intl F4-3200C16-16GIS 16GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

G Skill Intl F4-3200C16-16GIS 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GIS 16GB

报告一个错误

更快的读取速度，GB/s

18 11.7

测试中的平均数值
更快的写入速度，GB/s

14.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-3200C16-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

11.7 18.0
写入速度，GB/s

8.4 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1578 3537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston KHX2133C13S4/16G 16GB

Kingston KHX2133C13S4/16G 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB