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Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3866C18-16GTZR 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs G Skill Intl F4-3866C18-16GTZR 16GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 18% 更低的延时
G Skill Intl F4-3866C18-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3866C18-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 34
  • 读取速度，GB/s
    11.7 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 3697

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3866C18-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Golden Empire CL15-15-15 D4-2400 4GB
Golden Empire CL15-15-15 D4-2400 4GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMK32GX4M2D3200C16 16GB
Corsair CMK32GX4M2D3200C16 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Avant Technology J644GU44J2320NF 32GB
Avant Technology J644GU44J2320NF 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM