Nanya Technology NT2GT64U8HD0BN-AD 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 19.1

测试中的平均数值

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 72

左右 -167% 更低的延时
更快的写入速度，GB/s

16.2 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 27
读取速度，GB/s

4,241.0 19.1
写入速度，GB/s

1,938.7 16.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 3784

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB