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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMD16GX4M4C3200C15 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Corsair CMD16GX4M4C3200C15 4GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
Corsair CMD16GX4M4C3200C15 4GB 需要考虑的原因
Corsair CMD16GX4M4C3200C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 72
    左右 -188% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMD16GX4M4C3200C15 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 25
  • 读取速度，GB/s
    4,241.0 left arrow 14.3
  • 写入速度，GB/s
    1,938.7 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2870

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Corsair CMD16GX4M4C3200C15 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX2133C13S4/16G 16GB
Kingston KHX2133C13S4/16G 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Teikon TMA81GS6CJR8N-VKSC 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM