RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5773CH0-CH9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB

Samsung M378B5773CH0-CH9 2GB vs SK Hynix HMA81GS6CJR8N-VK 8GB

总分
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分
star star star star star
SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

差异 规格 评论

差异

Samsung M378B5773CH0-CH9 2GB 需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
SK Hynix HMA81GS6CJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6CJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 39
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 35
  • 读取速度，GB/s
    12.8 left arrow 15.1
  • 写入速度，GB/s
    7.4 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1770 left arrow 2631

Samsung M378B5773CH0-CH9 2GB RAM的比较

Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

SK Hynix HMA81GS6CJR8N-VK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hypertec G2RT-4AFT00 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 9905700-012.A00G 8GB
Kingston 9905700-012.A00G 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905678-042.A00G 8GB
Kingston 9905678-042.A00G 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905599-026.A00G 8GB
Kingston 9905599-026.A00G 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX2666C15S4/16G 16GB
Kingston KHX2666C15S4/16G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905734-003.A00G 32GB
Kingston 9905734-003.A00G 32GB
内存RAM