Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology BL16G32C16U4R.M16FE1 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Crucial Technology BL16G32C16U4R.M16FE1 16GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值

Crucial Technology BL16G32C16U4R.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4R.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 72

左右 -85% 更低的延时
更快的写入速度，GB/s

14.9 1,938.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 39
读取速度，GB/s

4,241.0 19.5
写入速度，GB/s

1,938.7 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

677 3825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology BL16G32C16U4R.M16FE1 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Apacer Technology 78.BAGP4.AR50C 4GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M378B5773DH0-CH9 2GB

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Kingston 9965604-033.D00G 16GB

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Corsair CML8GX3M2A1600C9 4GB

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G Skill Intl F4-4266C17-16GTZRB 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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InnoDisk Corporation M4S0-8GSSOCRG 8GB