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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
比较
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
总分
Nanya Technology NT2GT64U8HD0BN-AD 2GB
总分
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
17.5
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
72
左右 -157% 更低的延时
更快的写入速度,GB/s
13.3
1,938.7
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
72
28
读取速度,GB/s
4,241.0
17.5
写入速度,GB/s
1,938.7
13.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
677
3317
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]198F 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3200C14-8GTZN 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Kingston 9905584-016.A00LF 4GB
Corsair CM4X4GD3000C15K4 4GB
A-DATA Technology DDR3 1866 8GB
A-DATA Technology DDR4 3000 8GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston HP16D3LS1KBGH/4G 4GB
Kingston 9905624-046.A00G 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
报告一个错误
×
Bug description
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