Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Micron Technology 8ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 72

左右 -213% 更低的延时
更快的写入速度，GB/s

13.4 1,938.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 23
读取速度，GB/s

4,241.0 17.0
写入速度，GB/s

1,938.7 13.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

677 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology BL8G30C15U4R.M8FE1 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Kingston 99U5474-038.A00LF 4GB

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Samsung M378A4G43AB2-CWE 32GB

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Kingston 9905584-016.A00LF 4GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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Samsung M393B1K70CH0-CH9 8GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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G Skill Intl F4-2666C15-8GVR 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB