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Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
比较
Samsung M471A1G44AB0-CWE 8GB vs Crucial Technology CT16G4SFD832A.M16FRS 16GB
总分
Samsung M471A1G44AB0-CWE 8GB
总分
Crucial Technology CT16G4SFD832A.M16FRS 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
低于PassMark测试中的延时,ns
50
55
左右 9% 更低的延时
更快的读取速度,GB/s
15.3
15.1
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFD832A.M16FRS 16GB
报告一个错误
更快的写入速度,GB/s
14.6
10.9
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
50
55
读取速度,GB/s
15.3
15.1
写入速度,GB/s
10.9
14.6
内存带宽,mbps
25600
25600
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2512
2665
Samsung M471A1G44AB0-CWE 8GB RAM的比较
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905744-035.A00G 16GB
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Golden Empire CL17-17-17 D4-2400 16GB
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Crucial Technology BLS8G4D240FSB.16FBR2 8GB
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Corsair CM4X8GE2133C13K4 8GB
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Ramaxel Technology RMN1740HC48D8F667A 2GB
Corsair CMD16GX4M4B3000C15 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMD128GX4M8A2400C14 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
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Bug description
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