Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Corsair CMD16GX4M2B3000C15 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,256.8 14.1

测试中的平均数值

Corsair CMD16GX4M2B3000C15 8GB

需要考虑的原因
Corsair CMD16GX4M2B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 64

左右 -121% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMD16GX4M2B3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 29
读取速度，GB/s

4,651.3 18.2
写入速度，GB/s

2,256.8 14.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 3353

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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G Skill Intl F4-2400C17-16GIS 16GB

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PNY Electronics PNY 2GB

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Samsung M471A2K43BB1-CRC 16GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Kingston CBD26D4S9S8ME-8 8GB

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Kingston ACR512X64D3S13C9G 4GB

Ramaxel Technology RMSA3260KC78HAF-2666 8GB

Ramaxel Technology RMSA3260KC78HAF-2666 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMD16GX4M2A2400C14 8GB

Corsair CMD16GX4M2A2400C14 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB