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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK32GX4M2B3200C16 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Corsair CMK32GX4M2B3200C16 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Corsair CMK32GX4M2B3200C16 16GB

Corsair CMK32GX4M2B3200C16 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 14.6
    测试中的平均数值
Corsair CMK32GX4M2B3200C16 16GB 需要考虑的原因
Corsair CMK32GX4M2B3200C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 64
    左右 -121% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK32GX4M2B3200C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 29
  • 读取速度，GB/s
    4,651.3 left arrow 17.9
  • 写入速度，GB/s
    2,256.8 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3618

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Corsair CMK32GX4M2B3200C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-8GSXWB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905701-029.A00G 16GB
Kingston 9905701-029.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston ACR26D4S9S1ME-4 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM