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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-2400C17-8GNT 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 11.7
    测试中的平均数值
G Skill Intl F4-2400C17-8GNT 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GNT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 64
    左右 -94% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 33
  • 读取速度，GB/s
    4,651.3 left arrow 16.3
  • 写入速度，GB/s
    2,256.8 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2918

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-2400C17-8GNT 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PUSKILL DDR3 1600 8G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F4-2400C17-8GNT 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK128GX4M8B3200C16 16GB
Corsair CMK128GX4M8B3200C16 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston KHX3733C19D4/16GX 16GB
Kingston KHX3733C19D4/16GX 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX2666C13/16GX 16GB
Kingston KHX2666C13/16GX 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM