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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3866C18-8GTZKW 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 16.7
    测试中的平均数值
G Skill Intl F4-3866C18-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 64
    左右 -256% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 18
  • 读取速度，GB/s
    4,651.3 left arrow 20.9
  • 写入速度，GB/s
    2,256.8 left arrow 16.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3609

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-3866C18-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C15-16GVK 16GB
G Skill Intl F4-3200C15-16GVK 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMY16GX3M2A1600C9 8GB
Corsair CMY16GX3M2A1600C9 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905703-009.A00G 16GB
Kingston 9905703-009.A00G 16GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 9965589-007.D01G 8GB
Kingston 9965589-007.D01G 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM