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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
总分
Nanya Technology NT2GT64U8HD0BY-AD 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
14.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
64
左右 -113% 更低的延时
更快的写入速度,GB/s
9.0
2,256.8
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
30
读取速度,GB/s
4,651.3
14.5
写入速度,GB/s
2,256.8
9.0
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
837
2374
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905678-006.A00G 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK64GX4M4A2133C13 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Crucial Technology RM51264BA1339.16FR 4GB
Samsung M391A1K43BB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix GKE800SO51208-2133AH 8GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD32GX4M2B3466C16 16GB
报告一个错误
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Bug description
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