Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Panram International Corporation W4N2666PS-8G 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,256.8 14.3

测试中的平均数值

Panram International Corporation W4N2666PS-8G 8GB

需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 64

左右 -220% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Panram International Corporation W4N2666PS-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 20
读取速度，GB/s

4,651.3 17.9
写入速度，GB/s

2,256.8 14.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

837 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston 9905744-027.A00G 16GB

Kingston 9905744-027.A00G 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3600C14-16GTRS 16GB

G Skill Intl F4-3600C14-16GTRS 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB