Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M378B5773DH0-CH9 2GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 11.7

测试中的平均数值

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 64

左右 -64% 更低的延时
更快的写入速度，GB/s

7.2 2,256.8

测试中的平均数值
更高的内存带宽，mbps

10600 6400

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung M378B5773DH0-CH9 2GB

主要特点

存储器类型

DDR2 DDR3
PassMark中的延时，ns

64 39
读取速度，GB/s

4,651.3 11.7
写入速度，GB/s

2,256.8 7.2
内存带宽，mbps

6400 10600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

5-5-5-15 / 800 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

837 1749

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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