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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
总分
Nanya Technology NT2GT64U8HD0BY-AD 2GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
17.8
测试中的平均数值
更快的写入速度,GB/s
2,256.8
14.1
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
64
左右 -121% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
29
读取速度,GB/s
4,651.3
17.8
写入速度,GB/s
2,256.8
14.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
837
3434
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905624-045.A00G 8GB
A-DATA Technology DDR3 1600 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C17-4GIS 4GB
Kingston 9905469-143.A00LF 4GB
Kingston KHX2666C16/16G 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK16GX4M2B3200C14 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Kingston K1N7HK-ELC 2GB
Corsair CMD128GX4M8B3200C16 16GB
报告一个错误
×
Bug description
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