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Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
10.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
77
左右 -120% 更低的延时
更快的写入速度,GB/s
8.0
2,622.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
35
读取速度,GB/s
3,405.2
10.3
写入速度,GB/s
2,622.0
8.0
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2327
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AD73I1C1674EV 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-447.A00LF 4GB
Kingston X74R9W-MIE 8GB
Samsung M471B5773DH0-CK0 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CM4X32GE2666C18S2 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 16G3200CL22 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
A-DATA Technology DDR2 800G 2GB
Samsung M378A1K43CB2-CRC 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2400C15-16GTZRX 16GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Samsung M471B5273CH0-CH9 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905744-024.A00G 16GB
报告一个错误
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Bug description
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