Nanya Technology NT4GC64B88B0NF-DI 4GB vs INTENSO 4GB

总分

Nanya Technology NT4GC64B88B0NF-DI 4GB

Nanya Technology NT4GC64B88B0NF-DI 4GB

总分

INTENSO 4GB

INTENSO 4GB

差异规格评论

差异

Nanya Technology NT4GC64B88B0NF-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B88B0NF-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时
更快的读取速度，GB/s

13.7 12.1

测试中的平均数值

INTENSO 4GB

需要考虑的原因
INTENSO 4GB

报告一个错误

更快的写入速度，GB/s

9.3 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B88B0NF-DI 4GB

INTENSO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.7 12.1
写入速度，GB/s

8.5 9.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2209 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B88B0NF-DI 4GB

Nanya Technology NT4GC64B88B0NF-DI 4GB

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Wilk Elektronik S.A. W-HK26S16G 16GB

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Kingston 9905403-444.A00LF 4GB

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Mushkin 99[2/7/4]192[F/T] 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4B8G1J3000K16W4 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Crucial Technology CT25664AA800.M16FG 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB