Nanya Technology NT4GC64B8HG0NS-CG 4GB vs A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 45

左右 7% 更低的延时

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

需要考虑的原因
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

报告一个错误

更快的读取速度，GB/s

14.7 9.7

测试中的平均数值
更快的写入速度，GB/s

11.1 6.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 45
读取速度，GB/s

9.7 14.7
写入速度，GB/s

6.0 11.1
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1396 2556

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Kingston 99U5712-002.A00G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Chun Well Technology Holding Limited D4U0830160B 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMK8GX4M2B4266C19 4GB

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Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

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Samsung M393A1G40DB0-CPB 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB