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Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
A-DATA Technology AO2P32NCSV1-BEVS 16GB 需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 42
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 39
  • 读取速度，GB/s
    9.7 left arrow 17.5
  • 写入速度，GB/s
    6.0 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2852

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3600C18-16GVK 16GB
G Skill Intl F4-3600C18-16GVK 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMSX32GX4M1A2666C18 32GB
Corsair CMSX32GX4M1A2666C18 32GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM