RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology DDR4 2666 2OZ 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 42
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 30
  • 读取速度，GB/s
    9.7 left arrow 16.7
  • 写入速度，GB/s
    6.0 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3106

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KHX426C13/8G 8GB
Kingston KHX426C13/8G 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
内存RAM
Kingston KKRVFX-MIE 8GB
Kingston KKRVFX-MIE 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9965600-027.A01G 16GB
Kingston 9965600-027.A01G 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM