Nanya Technology NT4GC64B8HG0NS-CG 4GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

14.3 9.7

测试中的平均数值
更快的写入速度，GB/s

9.8 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

9.7 14.3
写入速度，GB/s

6.0 9.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 2546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Corsair CMK16GX4M2C3000C16 8GB

Corsair CMK16GX4M2C3000C16 8GB

Samsung M392B2G70DM0-YH9 16GB

Samsung M392B2G70DM0-YH9 16GB

Samsung M393B1K70DH0-YH9 8GB

Samsung M393B1K70DH0-YH9 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB