A-DATA Technology DQKD1A08 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 52

左右 -117% 更低的延时
更快的写入速度，GB/s

12.1 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 24
读取速度，GB/s

2,614.5 15.6
写入速度，GB/s

1,145.9 12.1
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK4U2400D17041C 4GB

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Corsair CMW64GX4M8C3000C15 8GB

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A-DATA Technology DDR4 2400 16GB

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Samsung M471B5173QH0-YK0 4GB

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Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Kingston 9905403-090.A01LF 4GB

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

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Kingston 9905403-003.B00LF 4GB

Kingston 9905403-003.B00LF 4GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB