Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-3600C16-8GVK 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-3600C16-8GVK 8GB

G Skill Intl F4-3600C16-8GVK 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-3600C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 51

左右 -104% 更低的延时
更快的读取速度，GB/s

20 9.8

测试中的平均数值
更快的写入速度，GB/s

17.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3600C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 25
读取速度，GB/s

9.8 20.0
写入速度，GB/s

8.1 17.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3600C16-8GVK 8GB

G Skill Intl F4-3600C16-8GVK 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston 9965662-010.A00G 16GB

Kingston 9965662-010.A00G 16GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston 9905702-119.A00G 8GB

Kingston 9905702-119.A00G 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB