Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT16G4SFD832A.C16FP 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology CT16G4SFD832A.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

16.6 9.7

测试中的平均数值
更快的写入速度，GB/s

14.3 6.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

9.7 16.6
写入速度，GB/s

6.0 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1396 3282

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMW128GX4M4E3200C16 32GB

Corsair CMW128GX4M4E3200C16 32GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB