Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 42

左右 -17% 更低的延时
更快的读取速度，GB/s

15.3 9.7

测试中的平均数值
更快的写入速度，GB/s

11.5 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 36
读取速度，GB/s

9.7 15.3
写入速度，GB/s

6.0 11.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMD32GX4M4A2666C15 8GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Avant Technology W641GU42J7240NB 8GB

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G Skill Intl F4-3600C18-16GTRG 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

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Team Group Inc. UD5-6400 16GB

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SK Hynix HMA41GR7MFR4N-TF 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB