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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KC5N22-MIE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston KC5N22-MIE 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Kingston KC5N22-MIE 16GB

Kingston KC5N22-MIE 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 51
    左右 18% 更低的延时
Kingston KC5N22-MIE 16GB 需要考虑的原因
Kingston KC5N22-MIE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KC5N22-MIE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 51
  • 读取速度，GB/s
    9.7 left arrow 13.1
  • 写入速度，GB/s
    6.0 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2805

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Kingston KC5N22-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
内存RAM
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
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Crucial Technology BL8G26C16U4W.8FD 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMW32GX4M4Z4000C18 8GB
Corsair CMW32GX4M4Z4000C18 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
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Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMU64GX4M4C3000C15 16GB
Corsair CMU64GX4M4C3000C15 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM