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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2133C14/16G 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston KHX2133C14/16G 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Kingston KHX2133C14/16G 16GB 需要考虑的原因
Kingston KHX2133C14/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 42
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2133C14/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 33
  • 读取速度，GB/s
    9.7 left arrow 15.7
  • 写入速度，GB/s
    6.0 left arrow 10.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2871

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Kingston KHX2133C14/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Patriot Memory (PDP Systems) PSD44G240082 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
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Peak Electronics 256X64M-67E 2GB
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Kingston KF3600C16D4/16GX 16GB
内存RAM