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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Micron Technology 16ATF2G64HZ-2G1B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    9.7 left arrow 13.9
  • 写入速度，GB/s
    6.0 left arrow 10.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2581

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Samsung M393A1G40EB1-CPB 8GB
Samsung M393A1G40EB1-CPB 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix GKE160UD102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Corsair CM3X4GSD1066 4GB
Corsair CM3X4GSD1066 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9965662-009.A00G 16GB
Kingston 9965662-009.A00G 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston HP26D4S9S8ME-8 8GB
Kingston HP26D4S9S8ME-8 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM