Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Panram International Corporation D4U2666P-8G 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Panram International Corporation D4U2666P-8G 8GB

需要考虑的原因
Panram International Corporation D4U2666P-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 42

左右 -100% 更低的延时
更快的读取速度，GB/s

16.2 9.7

测试中的平均数值
更快的写入速度，GB/s

7.6 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Panram International Corporation D4U2666P-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 21
读取速度，GB/s

9.7 16.2
写入速度，GB/s

6.0 7.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 2337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GS6DJR8N-XN 8GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Corsair CMSX32GX4M2A3000C16 16GB

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Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB