AMD R538G1601U2S 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 22

左右 14% 更低的延时
更快的读取速度，GB/s

18.4 17.7

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

更快的写入速度，GB/s

12.7 12.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 22
读取速度，GB/s

18.4 17.7
写入速度，GB/s

12.3 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3189 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Corsair CMSX8GX4M1A2666C18 8GB

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Team Group Inc. 16GB

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V-Color Technology Inc. TA48G36S818BN 8GB

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Kingston 9905403-444.A00LF 4GB

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Kingston 99U5700-010.A00G 8GB

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Kingston 9965640-015.A00G 32GB

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB