Nanya Technology NT4GC64B8HG0NS-CG 4GB vs SK Hynix HMA451U7AFR8N-TF 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

SK Hynix HMA451U7AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

13.2 9.7

测试中的平均数值
更快的写入速度，GB/s

8.9 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

9.7 13.2
写入速度，GB/s

6.0 8.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 2284

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R534G1601U1S-UO 4GB

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GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

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AMD AE34G2139U2 4GB

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

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G Skill Intl F4-3600C19-8GVSB 8GB

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Samsung M391B5673FH0-CH9 2GB

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G Skill Intl F4-3400C16-16GVR 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston KHX2400C14/16G 16GB

Kingston KHX2400C14/16G 16GB