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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F2-6400CL5-1GBNT 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F2-6400CL5-1GBNT 1GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
G Skill Intl F2-6400CL5-1GBNT 1GB

G Skill Intl F2-6400CL5-1GBNT 1GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 69
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 2
    测试中的平均数值
G Skill Intl F2-6400CL5-1GBNT 1GB 需要考虑的原因
G Skill Intl F2-6400CL5-1GBNT 1GB
报告一个错误
  • 更快的写入速度，GB/s
    1,471.1 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 5300
    左右 1.21 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F2-6400CL5-1GBNT 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    63 left arrow 69
  • 读取速度，GB/s
    3,231.0 left arrow 2,909.1
  • 写入速度，GB/s
    1,447.3 left arrow 1,471.1
  • 内存带宽，mbps
    5300 left arrow 6400
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    478 left arrow 447

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

G Skill Intl F2-6400CL5-1GBNT 1GB RAM的比较

Crucial Technology BL8G30C15U4R.M8FE 8GB
SK Hynix HMA82GU6DJR8N-WM 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F2-6400CL5-1GBNT 1GB
G Skill Intl F2-6400CL5-1GBNT 1GB
内存RAM
Kingston 9905471-076.A00LF 8GB
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Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
G Skill Intl F4-3200C15-8GTZKW 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston KF3200C20S4/32GX 32MB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kllisre 36JSF1G72PZ-1G9K1 8GB
Kllisre 36JSF1G72PZ-1G9K1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston HP26D4U6S8ME-8X 8GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Kingston 9965600-012.A02G 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMU64GX4M4A2666C16 16GB
Corsair CMU64GX4M4A2666C16 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM