TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-3200C15-8GTZKW 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.9

测试中的平均数值

G Skill Intl F4-3200C15-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 53

左右 -194% 更低的延时
更快的写入速度，GB/s

15.3 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C15-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 18
读取速度，GB/s

3,726.4 19.9
写入速度，GB/s

1,590.1 15.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT32G4SFD832A.M16FF 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT16G4SFD824A.C16FN 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Super Talent F24EB8GS 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C16-8GVKBN 8GB

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Corsair CMX8GX3M2A2000C9 4GB

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Corsair CML8GX3M2A1866C9 4GB

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Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

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G Skill Intl F3-1600C9-8GXM 8GB

G Skill Intl F3-1600C9-8GXM 8GB

SK Hynix HMT31GR7CFR4A-H9 8GB

SK Hynix HMT31GR7CFR4A-H9 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB