Nanya Technology NT4GC64B8HG0NS-CG 4GB vs SK Hynix HMA81GR7AFR8N-UH 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 57

左右 26% 更低的延时
更快的读取速度，GB/s

9.7 9.4

测试中的平均数值

SK Hynix HMA81GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-UH 8GB

报告一个错误

更快的写入速度，GB/s

7.6 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

SK Hynix HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 57
读取速度，GB/s

9.7 9.4
写入速度，GB/s

6.0 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273DH0-CH9 4GB

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Kingston HX318C10FK/4 4GB

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Super Talent F24EB8GS 8GB

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Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M386A2G40DB0-CPB 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK64GX4M2A2400C16 32GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK64GX4M8A2666C16 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4SFS624A.C4FB 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMWB8G1L3200K16W4 8GB

Corsair CMWB8G1L3200K16W4 8GB