RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
42
左右 -24% 更低的延时
更快的读取速度,GB/s
20.3
9.7
测试中的平均数值
更快的写入速度,GB/s
13.4
6.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
34
读取速度,GB/s
9.7
20.3
写入速度,GB/s
6.0
13.4
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1396
3343
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CB8GU2666.C8ET 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M378A1G43DB0-CPB 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Kingston 9905403-011.A03LF 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Kingston 9905403-090.A01LF 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M474A1G43DB0-CPB 8GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Corsair CMD16GX4M4B3300C16 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9965669-018.A00G 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M393A2G40DB0-CPB 16GB
Kingston ACR16D3LS1KBG/8G 8GB
Kingston 9905625-098.A00G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G26C16U4R.8FD 8GB
报告一个错误
×
Bug description
Source link