Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Samsung M471B5273DH0-CH9 4GB

总分

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 47

左右 4% 更低的延时
更快的读取速度，GB/s

13 9.3

测试中的平均数值
更快的写入速度，GB/s

9.0 5.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Samsung M471B5273DH0-CH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 47
读取速度，GB/s

13.0 9.3
写入速度，GB/s

9.0 5.9
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2079 1413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Avant Technology F641GU67F9333G 8GB

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AMD R5316G1609U2K 8GB

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A-DATA Technology AM1P26KCST2-BABS 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 18ASF1G72PZ-2G1B1 8GB

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Kingston 9905469-153.A00LF 4GB

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G Skill Intl F4-3600C18-16GTRG 16GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3200C15-16GVK 16GB

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Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB